Home
News
Tech Grid
Interviews
Anecdotes
Think Stack
Press Releases
Articles
  • Enterprise AI

Kioxia Launches 9th Gen BiCS FLASH 512Gb TLC Samples


Kioxia Launches 9th Gen BiCS FLASH 512Gb TLC Samples
  • by: Business Wire
  • |
  • July 25, 2025

Kioxia America, Inc. has started sample shipments of its 512Gb Triple-Level Cell (TLC) memory devices, utilizing the 9th generation BiCS FLASH 3D flash memory technology. This advancement, aimed at mass production in fiscal year 2025, targets applications demanding high performance and power efficiency, particularly in AI-driven systems and enterprise SSDs.

Quick Intel

  • Kioxia ships 9th Gen BiCS FLASH 512Gb TLC memory samples.
  • Mass production planned for fiscal year 2025.
  • 61% faster write, 12% faster read compared to prior 512Gb products.
  • Power efficiency improved by 36% for writes, 27% for reads.
  • Toggle DDR6.0 interface supports 3.6Gb/s NAND speed.
  • Designed for AI workloads, enterprise SSDs, and edge devices.

Advanced Memory for High-Performance Applications

Kioxia’s 9th generation BiCS FLASH 512Gb TLC memory, built on a 120-layer stacking process and CMOS directly Bonded to Array (CBA) technology, delivers significant performance enhancements. With a 61% improvement in write speeds, 12% in read speeds, and up to 36% better power efficiency during writes, this memory is optimized for AI workloads, enterprise SSDs, and edge devices.

Dual-Axis Strategy for Innovation

Kioxia pursues a dual-axis approach to meet diverse market needs:

  • 9th Gen BiCS FLASH: Leverages CBA technology to integrate existing memory cells with advanced CMOS, reducing costs while boosting performance.
  • 10th Gen BiCS FLASH: Focuses on increasing memory layers to address future high-capacity demands.

This strategy ensures Kioxia delivers cost-effective, high-performance solutions tailored to current and emerging applications.

Technical Advancements

The 9th generation BiCS FLASH 512Gb TLC achieves an 8% increase in bit density through planar scaling and supports a high-speed Toggle DDR6.0 interface at 3.6Gb/s, with demonstrated NAND interface speeds up to 4.8Gb/s. These improvements make it ideal for applications requiring consistent throughput and thermal efficiency, such as GPU-based AI systems and industrial embedded solutions.

Industry Impact

“Kioxia continues to pursue a dual-axis strategy to address the diverse needs of cutting-edge applications while delivering competitive products providing optimal investment efficiency,” the company stated. By integrating these devices into enterprise SSDs, Kioxia aims to enhance GPU efficiency for AI systems, supporting the growing demand for reliable, high-performance storage in data-intensive environments.

Kioxia’s latest BiCS FLASH technology reinforces its leadership in memory solutions, driving innovation for AI, cloud storage, and other read-heavy applications while strengthening global partnerships.

 

About KIOXIA America, Inc.

KIOXIA America, Inc. is the U.S.-based subsidiary of KIOXIA Corporation, a leading worldwide supplier of flash memory and solid-state drives (SSDs). From the invention of flash memory to today’s breakthrough BiCS FLASH™ 3D technology, KIOXIA continues to pioneer innovative memory, SSD and software solutions that enrich people's lives and expand society's horizons. The company's innovative 3D flash memory technology, BiCS FLASH, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, automotive systems, data centers and generative AI systems. 

© 2025 KIOXIA America, Inc. All rights reserved. Information in this press release, including product pricing and specifications, content of services, and contact information is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable KIOXIA product specifications.

News Disclaimer
  • Share